半導体レーザ装置
文献类型：专利
| 作者 | 瀧川 信一; 粂 雅博; 清水 裕一 |
| 发表日期 | 1997-06-27 |
| 专利号 | JP2666085B2 |
| 著作权人 | 松下電器産業株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レーザ装置 |
| 英文摘要 | PURPOSE:To enable a semiconductor laser device of this design to keep its optical output constant even if an atmospheric temperature changes by a method wherein the wavelength-dependent properties of the forward outgoing light ray and the backward outgoing light ray are made to cancel each other through the wavelength- dependent properties of a detector in sensitivity. CONSTITUTION:Both the projecting end and the rear incident end of a semiconductor laser are coated with Al2O3 and Si respectively. By this setup, the ends of the semiconductor laser are different from each other in reflectivity, so that light rays outgoing from the front end and rear end are different from each other at a prescribed wavelength, consequently the semiconductor laser shows wavelength-dependent properties. On the other hand, when the surface Si (PD) of a photodiode is coated with Al2O3, the photodiode displays transmittance wavelength dependent properties. At this point, when oscillation light changes in length, both the conductor laser and the photodiode show wavelength-dependent properties and change outgoing light rays. At this point, as the conductor laser and the photodiode become reflectivity wavelength dependent and transmittance wavelength dependent respectively and both the wavelength dependent properties cancel each other, a semiconductor laser device, which retains a constant optical output even if an atmospheric temperature changes, can be realized. |
| 公开日期 | 1997-10-22 |
| 申请日期 | 1989-06-09 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86876]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 松下電器産業株式会社 |
| 推荐引用方式 GB/T 7714 | 瀧川 信一,粂 雅博,清水 裕一. 半導体レーザ装置. JP2666085B2. 1997-06-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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