Manufacture of semiconductor device
文献类型：专利
| 作者 | TANETANI MOTOTAKA; SUGIMOTO YOSHIMASA; HIDAKA HIROMI; AKITA KENZO |
| 发表日期 | 1990-07-10 |
| 专利号 | JP1990177431A |
| 著作权人 | HIKARI GIJUTSU KENKYU KAIHATSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor device |
| 英文摘要 | PURPOSE:To etch only a GaAs layer on the surface of a laminated semiconductor selectively in an extra-high vacuum without using a masking process by a method wherein an electron beam is applied to the surface of the GaAs layer and, at the same time, at least one type of gas selected among halogens and halogen compounds is applied to the surface of the GaAs layer. CONSTITUTION:In order to manufacture a semiconductor device which has a semiconductor lamination part in which a first layer 17 made of GaAs is formed and a second layer 16 made of AlGaAs and adjoining the first layer 17 is formed under the first layer 17, an electron beam 25 is applied to the surface of the first layer 17 and, at the same time, at least one type of gas 26 selected among halogens and halogen compounds is applied to the surface of the first layer 17. With this process, the first layer 17 only is etched selectively without etching the second layer 16 practically. For instance, the n-type GaAs current constriction layer 17 is provided on an n-type GaAs substrate 11 and the p-type AlxGa1-xAs cladding layer 16 is provided under the layer 17 to form the lamination part 12-17 and then the electron beam 25 and the chlorine gas 26 are applied to the GaAs current constriction layer 17 simultaneously to etch the current constriction layer 17. |
| 公开日期 | 1990-07-10 |
| 申请日期 | 1988-12-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86881]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HIKARI GIJUTSU KENKYU KAIHATSU KK |
| 推荐引用方式 GB/T 7714 | TANETANI MOTOTAKA,SUGIMOTO YOSHIMASA,HIDAKA HIROMI,et al. Manufacture of semiconductor device. JP1990177431A. 1990-07-10. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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