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文献类型：专利
| 作者 | HAYASHI SHOJI |
| 发表日期 | 1993-12-20 |
| 专利号 | JP1993087998B2 |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To reduce the frequency of short-circuit due to extended electrode by a method wherein a thick short-circuit preventing layer made of silicon with low resistance is provided on the part between a multiple growing layer composed of an active layer as one component layer and an electrode mainly composed of Au. CONSTITUTION:An insulating film 12 made of SiO2 etc. is partially formed on the main surface of wafer 1 by photolithography and then the main surface is implanted with Zn utilizing the insulating film 12 as a mask to form a zinc diffused region 13 reaching halfway depth of a clad layer 5. This zinc diffused region 13 is to become an ohmic layer of contact electrode. Next a short-circuit preventing layer 14 made of silicon (Si) with low electric resistance is formed on the main surface of wafer The short-circuit preventing layer 14 in chip status is made thicker so that an extended electrode 16 of anode electrode 15 formed on the surface of said layer 14 may not cause any short-circuit when it happens to come into contact with P-N junction etc. |
| 公开日期 | 1993-12-20 |
| 申请日期 | 1984-04-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86890]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | HAYASHI SHOJI. -. JP1993087998B2. 1993-12-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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