Semiconductor laser device
文献类型：专利
| 作者 | NAKAJIMA HISAO; FUKUZAWA TADASHI; SEMURA SHIGERU; OOTA TSUNEAKI; UCHIDA YOUKO; KOBAYASHI KEISUKE |
| 发表日期 | 1985-05-07 |
| 专利号 | JP1985079785A |
| 著作权人 | KOGYO GIJUTSUIN |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To oscillate laser beams at low threshold current density by forming an optical waveguide region at the central section of an optical guide layer and forming an optical confinement region, a composition thereof is brought to the mean composition of semiconductors of two kinds shaping quantum well type structure by the diffusion of zinc, to both side sections of the optical waveguide region. CONSTITUTION:When currents are applied to a P type electrode 22 and an N type electrode 23, electrons and holes recombine in an active layer 13 having quantum well type structure, and beams are generated. Since there is an optical guide layer 16 on the upper surface of the active layer 13 through an N type GaAlAs layer 15, there is an optical waveguide region 16a having quantum well structure at the center of the optical guide layer and there are optical confinement regions 16b, forbidden band width thereof is wider than that of the optical waveguide region 16a and a refractive index thereof is smaller than that of the region 16a, on both sides of the region 16a, beams generated in the active layer 13 spread to the optical waveguide region 16a. Since there are an upper clad layer 14 having wide forbidden band width and the optical confinement regions 16b, forbidden band width thereof is widened and the refractive index thereof is reduced by the diffusion of zinc, spreads in both upward and lateral directions of beams are prevented. |
| 公开日期 | 1985-05-07 |
| 申请日期 | 1983-10-06 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86907]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KOGYO GIJUTSUIN |
| 推荐引用方式 GB/T 7714 | NAKAJIMA HISAO,FUKUZAWA TADASHI,SEMURA SHIGERU,et al. Semiconductor laser device. JP1985079785A. 1985-05-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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