Buried type semiconductor laser and manufacture thereof
文献类型：专利
| 作者 | YAMAGUCHI AKIRA; INOUE TAKESHI; IRITA TAKESHI |
| 发表日期 | 1992-03-12 |
| 专利号 | JP1992079284A |
| 著作权人 | HIKARI KEISOKU GIJIYUTSU KAIHATSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Buried type semiconductor laser and manufacture thereof |
| 英文摘要 | PURPOSE:To make a burying growth smoothly by utilizing the plane of [110] as a growth stop plane. CONSTITUTION:An n-type buffer layer 2 or a p-type guide layer 5 is arranged to make a crystal growth on a (100) n-type GaAs substrate 1 by the MOVPE technique. All the layers from the p-type guide 5 to a n-type clad layer 3 are etched to from a mesa stripe in the direction of (001) or in the direction of [010]. In succession, a high resistance clad layer 8 and a GaAs cap layer 9 are arranged to make a selection growth on the side of the mesa stripe. As the material of the high resistance clad layer 8, AlxGa1-xAs (where x>0.4 is selected). At the same time, a triangle-profiled layer 8' is formed on the mesa stripe where the plane of [110] is used as a growth stop plane. On the regions other than the growth stop plane, a GaAs cap layer 9 is grown by crystal lization. After the crystal growth the triangle-shaped layer 8' is selectively etched based on the application of the differential etching rate between the AlxGa1-xAs and GaAs. The end face is formed by conducting etching or the like where an electrode is mounted. This construction makes it possible to grow selectively a burying layer whose surface is smooth by using growth stop on the crystal plane. |
| 公开日期 | 1992-03-12 |
| 申请日期 | 1990-07-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86908]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HIKARI KEISOKU GIJIYUTSU KAIHATSU KK |
| 推荐引用方式 GB/T 7714 | YAMAGUCHI AKIRA,INOUE TAKESHI,IRITA TAKESHI. Buried type semiconductor laser and manufacture thereof. JP1992079284A. 1992-03-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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