Manufacture of semiconductor laser
文献类型：专利
| 作者 | KURODA NAOTAKA |
| 发表日期 | 1990-01-10 |
| 专利号 | JP1990005589A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To obtain a buried hetero-structure semiconductor laser by a method wherein a growth rate of a growth layer on an A plane is set to be nearly equal to that of Fe doped InP on a flat part of a substrate grows highly resistive at the burying growth of a mesa side, the whole buried layer is made to have a specified non-trapped trap concentration, and a specified current blocking layer is formed through the whole buried layer. CONSTITUTION:A double heterojunction structure is epitaxially grown on an n-type InP substrate 10. Next, a stripe-like mask 14 of SiO2 is formed in a direction in parallel with , and an inverted mesa is formed. And, the inverted mesa is buried with Fe doped InP. First, at a stage that the growth on an A plane is prevailing, the growth rate of Fe doped InP onto the A plane is restricted to be nearly equal to what an non-trapped trap concentration of 3X10cm and resistivity of 10OMEGA.cm can be obtained, and the growth layer 16 of Fe doped InP onto the A plane is made to grow to form a mesa whose slope is a B plane 17. Next, at a stage that the growth of Fe doped InP onto a plane (100) is prevailing, the growth rate is set to a condition that the growth layer onto the substrate grows to be highly resistive. A second growth layer 18 is formed until the mesa side is buried with Fe doped InP to be flat. |
| 公开日期 | 1990-01-10 |
| 申请日期 | 1988-06-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86910]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | KURODA NAOTAKA. Manufacture of semiconductor laser. JP1990005589A. 1990-01-10. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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