半導体レ-ザ装置及びその製造方法
文献类型：专利
| 作者 | 永井 豊; 三橋 豊 |
| 发表日期 | 1994-08-24 |
| 专利号 | JP1994066518B2 |
| 著作权人 | 三菱電機株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レ-ザ装置及びその製造方法 |
| 英文摘要 | PURPOSE:To enable the high output operation to be performed by a method wherein a window structure to be N type at high concentration near the end of a resonator of an active layer and P type at high concentration in the other regions is formed by solid-diffusion of P type impurity diffused from a P type photoconductive layer as a diffusion source. CONSTITUTION:Zn is diffused to a P type Al0.25Ga0.75As photoconductive layer 5 passing through a contact layer 7 and an N type Al0.50Ga0.50As clad layer 6 from a part of SiO2 film removed by diffusion using closed pipe systwn such as vacuum sealing diffusion etc. In such a diffusion process, Zn is solid-diffused from the P type Al0.25Ga0.75As photoconductive layer 5 in high concentration through a P type Al0.50 Ga0.50As clad layer 4 in low concentration finally reaching an N type Al0.15Ga0.85As active layer 3 to reverse the conductivity type of active layer to P type. Then, N electrode 11 and P electrode 12 are formed respectively on the substrate side of wafer and the surface side. Through these procedures, a photoconductive layer with high refractive index can be formed through the intermediary of thin clad layers so that a semiconductor laser device capable of high output operation may be manufactured by solid-diffusion of P type impurity diffused from the P type photoconductive layer as a diffusion source. |
| 公开日期 | 1994-08-24 |
| 申请日期 | 1986-05-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86911]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 三菱電機株式会社 |
| 推荐引用方式 GB/T 7714 | 永井 豊,三橋 豊. 半導体レ-ザ装置及びその製造方法. JP1994066518B2. 1994-08-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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