中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Semiconductor laser device and manufacture thereof

文献类型:专利

作者OBA YASUO; YAMAMOTO MOTOYUKI; KANBARA HIDETO; ISHIKAWA MASAYUKI; WATANABE YUKIO
发表日期1987-09-04
专利号JP1987200785A
著作权人株式会社東芝
国家日本
文献子类发明申请
其他题名Semiconductor laser device and manufacture thereof
英文摘要PURPOSE:To obtain a highly reliable laser device having a single basic lateral mode and capable of growing high-quality crystals on a surface having stepped portions even with mixed crystals having strict lattice-matching conditions, by utilizing the same V-family element for a current blocking layer and for a substrate. CONSTITUTION:A semiconductor laser device according to the present invention comprises a semiconductor substrate 11 having a first type of conductivity, a clad layer 14 of the first type of conductivity, an active layer 15 and clad layers 16-18 having a second type of conductivity and having a linear projection 18 thereon. A double hetero junction structure is thus formed on the semiconductor substrate 1 A current blocking layer 21 is provided on the double hetero junction structure except at least a part of the projection 18 of the clad layers having the second type of conductivity so that it performs optical waveguide and constriction of electric current. In such a semiconductor laser device, the substrate 11, he double hetero junction structure 14-18 and the current blocking layer 21 may be formed of compound semiconductors of III-V families, while the double hetero junction structure 14-18 contains a V family element different from an V-family element composing the substrate 11 and the current blocking layer 21 contains the same V-family element with the substrate 1
公开日期1987-09-04
申请日期1986-02-28
状态失效
源URL[http://ir.opt.ac.cn/handle/181661/86917]  
专题半导体激光器专利数据库
作者单位株式会社東芝
推荐引用方式
GB/T 7714
OBA YASUO,YAMAMOTO MOTOYUKI,KANBARA HIDETO,et al. Semiconductor laser device and manufacture thereof. JP1987200785A. 1987-09-04.

入库方式: OAI收割

来源:西安光学精密机械研究所

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