Semiconductor laser device
文献类型：专利
| 作者 | SHIMADA NAOHIRO; OKAJIMA MASASUE; MUTOU YUUHEI; MOGI NAOTO |
| 发表日期 | 1985-01-09 |
| 专利号 | JP1985003177A |
| 著作权人 | TOSHIBA KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To obtain a laser device, an astigmatism and noises therefrom are small and which is suitable for a light source for an optical disk, by simultaneously forming refractive-index waveguide structure and gain waveguide structure in the direction of a resonator and independently selecting structural parameters determining the effective refractive-index difference of a refractive-index waveguide section and the gain distribution of a gain waveguide section. CONSTITUTION:An n type Ga0.55Al0.45As clad layer 2, an un-doped Ga0.85Al0.15 As active layer 3 and a p type Ga0.65Al0.35As optical guide layer 4 are laminated on an n type GaAs substrate 1 and grown in a liquid phase in an epitaxial manner, and a latticed optical guide with striped projecting sections 5 and flat sections 6 is formed on the surface of the layer 4 through etching by a phosphoric acid group etchant while being covered with a resist mask. A p type Ga0.55Al0.45As clad layer 7 and a p type GaAs contact layer 8 are grown on the latticed optical guide through a molecular-beam epitaxial method, the layer 8 is changed into a plurality of striped shapes through etching, and sections among the striped layers 8 are buried with oxide films 9. Metallic electrodes 11 and 12 are each applied on the films 9 and the back of the substrate |
| 公开日期 | 1985-01-09 |
| 申请日期 | 1983-06-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86919]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOSHIBA KK |
| 推荐引用方式 GB/T 7714 | SHIMADA NAOHIRO,OKAJIMA MASASUE,MUTOU YUUHEI,et al. Semiconductor laser device. JP1985003177A. 1985-01-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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