-
文献类型：专利
| 作者 | SUGAO SHIGEO |
| 发表日期 | 1993-02-15 |
| 专利号 | JP1993011437B2 |
| 著作权人 | NIPPON ELECTRIC CO |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To realize a very high efficiency oscillation and response with a frequency as high as over 10GHz by a method wherein current blocking layers on the flat parts on both sides of an active layer of a DC-BBH type semiconductor laser are replaced by insulating films of SiO2 or the like. CONSTITUTION:By reverse P-N junctions composed of P-type InP layers 15 and N-type InP current blocking layers 16 buried in two trenches and polyimide layer 22 and SiO2 layers 19, a current made to flow by a voltage applied between a P-type electrode 20 and an N-type electrode 21 is made to flow selectively to a P-type InGaAsP contact layer 18, a P-type InP cap layer 17, a P-type InP cladding layer 14, an active layer 11 and an N-type buffer layer 12. At that time, leakage currents are made to flow from the P-type InP layers 15 to P-type InP cladding layers 14 outside the trenches. However, as an NPN transistor is not formed in such part, the leakage current is not amplified. With this constitution, the leakage current is very low and a high efficiency oscillation can be realized. |
| 公开日期 | 1993-02-15 |
| 申请日期 | 1986-02-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86922]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON ELECTRIC CO |
| 推荐引用方式 GB/T 7714 | SUGAO SHIGEO. -. JP1993011437B2. 1993-02-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。