Liquid phase epitaxial growth device
文献类型：专利
| 作者 | NISHIJIMA YOSHITO; FUKUDA HIROKAZU; YAMAMOTO KOUSAKU |
| 发表日期 | 1984-05-22 |
| 专利号 | JP1984088835A |
| 著作权人 | FUJITSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Liquid phase epitaxial growth device |
| 英文摘要 | PURPOSE:To prevent impurities from diffusing into an upper comfinement layer by arranging a cooling member in a reaction tube with being close to an epitaxial growth jig thereby rapidly cooling a substrate after epitaxial growth by moving a boat onto the cooling member. CONSTITUTION:In liquid reservoirs 37-39 of a fixed member 33 of a jig, PbTe1-ySey 40 for a lower trapping layer, Pb1-xSnxTe 41 for an active layer and PbTe1-ySey 42 for a lower confinement layer are supplied respectively, being added with Tl. A boat 32 mounted on a carbonic material 34 is buried in a silica plate 35 and is introduced into a reaction tube 43 of H2 atmosphere to fuse a crystal material by heating an oven 36. Next, the boat 32 is moved by movement C to arrange liquid reservoirs on a substrate 31 successively and to form an epitaxial layer. After forming the epitaxial layer, the boat 32 is slidden by the movement C instantly and carried on the silica plate 35 which is a poor conductor for heat, where the substrate 31 in the boat 32 is cooled down rapidly. Used melt is contained in a reservoir 44 of the carbonic plate 34. Cooling prevents impurities from transfering from an active layer to an upper confinement layer in spite of making the active layer thinner, thereby facilitating the fabrication of single mode type laser elements. |
| 公开日期 | 1984-05-22 |
| 申请日期 | 1982-11-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86923]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU KK |
| 推荐引用方式 GB/T 7714 | NISHIJIMA YOSHITO,FUKUDA HIROKAZU,YAMAMOTO KOUSAKU. Liquid phase epitaxial growth device. JP1984088835A. 1984-05-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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