Semiconductor laser device
文献类型：专利
| 作者 | HIROSE MASANORI; SUGINO TAKASHI; KUME MASAHIRO; YOSHIKAWA AKIO; YAMAMOTO ATSUYA; NAKAMURA AKIRA |
| 发表日期 | 1989-04-20 |
| 专利号 | JP1989103893A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To enable electronic circuit elements to be monolithically integrated with ease on a substrate by a method wherein two stripe-like grooves are provided in parallel making their bases reach to a layer just above an active layer, an negative conductivity type region is formed on both sides or at least one side of a ridge waveguide formed of grooves so as to make its base reach to at least a first clad layer. CONSTITUTION:Two stripe-like grooves are provided in parallel extending from the surface to a clad layer 4 for the formation of a ridge section. A p-type region 9 is formed in such a manner that Zn is made to be selectively diffused into the part of a laminated body other than a ridge section so as to reach to a clad layer 2. SiN films 8 are formed in the grooves, furthermore ohmic electrodes 7 and 8 are provided to the top of the ridge section and the p-type region 9 respectively. By these processes, a semiinsulating substrate can be utilized as a substrate 1, both electrodes 6 and 7 can be formed on a laser epitaxial face side, and an optoelectronic integrated circuit OEIC is able to be constituted. |
| 公开日期 | 1989-04-20 |
| 申请日期 | 1987-10-16 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86929]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | HIROSE MASANORI,SUGINO TAKASHI,KUME MASAHIRO,et al. Semiconductor laser device. JP1989103893A. 1989-04-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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