Optical semiconductor device
文献类型：专利
| 作者 | HORI KENICHI |
| 发表日期 | 1983-06-18 |
| 专利号 | JP1983102590A |
| 著作权人 | FUJITSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Optical semiconductor device |
| 英文摘要 | PURPOSE:To achieve thermal separation between elements in an optical semiconductor integrated circuit and efficient heat radiation between elements, by forming a metal layer on the heat radiating side, and providing grooves reaching a part deeper than the surface of a substrate between the elements. CONSTITUTION:Zinc or cadmium is selectively diffused from an epitaxial layer, i.e. a cap layer 11, and a P type diffused region 12, which defines a current path, is formed. Titanium, platinum, and gold are sequentially evaporated on the side of the cap layer 11 and the side of the substrate 7, and a P side electrode 13 and an N side electrode 14 are provided. Then metal having excellent thermal conductivity such as gold, copper, silver, or the like is formed on the side of the N side electrode 14 in one layer or in a plurality of layers, and the metal layer 15 is formed. A mask layer is formed at a region other than region, by which the elements are separated, on the P side electrode 13, and only the P side electrode 13 is etched. With the mask layer as a mask, the grooves reaching the depth of the substrate 7 is provided by using a mixed liquid of sulfuric acid, hydrogen peroxide, and water. The mask layer is removed. Thereafter, Ti, Pt, and Au are sequentially evaporated on a diamond heat sink irradiating high heat by sputtering and bonded to the metal layer 15 on which metallized elements are formed. |
| 公开日期 | 1983-06-18 |
| 申请日期 | 1981-12-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86930]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU KK |
| 推荐引用方式 GB/T 7714 | HORI KENICHI. Optical semiconductor device. JP1983102590A. 1983-06-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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