Semiconductor laser
文献类型：专利
| 作者 | FURUSE TAKAO |
| 发表日期 | 1986-06-02 |
| 专利号 | JP1986115372A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To reduce astigmatism, and to form a semiconductor laser having excellent current optical output characteristics having small oscillation threshold currents and superior linearity and high output characteristics by controlling a current constriction function and an optical waveguide function independently and shaping index waveguide structure, which does not depend upon an optical absorption effect. CONSTITUTION:An n type Al0.4Ga0.6As layer with a striped groove in groove width W1 of approximately one micron, a first semiconductor layer 5, is arranged onto a p type Al0.4Ga0.6As layer 4, thus shaping a narrow current path. The forbidden band width of the n type Al0.4Ga0.6As layer 5 is made larger than that of an n type Al0.11Ga0.89As layer 3 as an active layer, thus resulting in no optical absorption effect on laser oscillation beams. On the other hand, an n type Al0.6Ga0.4As layer having forbidden band width larger the other any layers and a refractive index smaller than them, a second semiconductor layer 6, is disposed onto the n type Al0.4Ga0.6As layer 5 while shaping a striped groove in groove width W2 of approximately three micron. Accordingly, optical beams having small astigmatism can be obtained. |
| 公开日期 | 1986-06-02 |
| 申请日期 | 1984-11-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86933]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | FURUSE TAKAO. Semiconductor laser. JP1986115372A. 1986-06-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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