Semiconductor laser
文献类型：专利
| 作者 | OOSHIMA MASAAKI; HIRAYAMA NORIYUKI; TAKENAKA NAOKI; TOYODA YUKIO |
| 发表日期 | 1985-09-24 |
| 专利号 | JP1985187081A |
| 著作权人 | MATSUSHITA DENKI SANGYO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To obtain a basic transverse mode without incorporating a narrow activation layer and improve production yield by a method wherein a portion of an optical waveguide formed between planes of cleavage is narrowed between two semicircular cutouts. CONSTITUTION:An N-InP clad layer 8, N-InGaAsP layer 9, and P-InP clad layers 10 are grown on an N-InP substrate 7 by the liquid phase epitaxial methed, and a portion is narrowed of the laminate of the layers 9, 10 constituting an optical waveguide. The narrowed portion is 5mum wide, satisfying the conditions a basic transverse mode should demand. |
| 公开日期 | 1985-09-24 |
| 申请日期 | 1984-03-07 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86940]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA DENKI SANGYO KK |
| 推荐引用方式 GB/T 7714 | OOSHIMA MASAAKI,HIRAYAMA NORIYUKI,TAKENAKA NAOKI,et al. Semiconductor laser. JP1985187081A. 1985-09-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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