Semiconductor laser
文献类型：专利
| 作者 | HIRAYAMA NORIYUKI; OOSHIMA MASAAKI; TAKENAKA NAOKI; KINO YUKIHIRO |
| 发表日期 | 1985-10-08 |
| 专利号 | JP1985198886A |
| 著作权人 | MATSUSHITA DENKI SANGYO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser, which can be easily manufactured and oscillates in a single longitudinal mode at a high yield rate, by a method wherein an active layer formed in a stripe form in the direction of [010] on the (100) plane of the semiconductor substrate is divided into two by a groove having a pair of (010) planes, a prescribed semiconductor layer is buried in the groove, (010) planes are formed one by one on both ends of the resonance faces and the (010) planes are used as the faces of the resonator. CONSTITUTION:This semiconductor laser has a (100) plane and consists of an n type InP substrate 1, an n type InP clad layer 2, an n type InGaAsP active layer 3, a p type InP clad layer 4, a p type InGaAsP cap layer 5, a p type InP layer 6, an n type InP layer 7 and ohmic electrodes 8 and 9. The active layer 3 consists of a double-hetero structure sandwiched between the clad layers 2 and 4 and is formed in a stripe form in the direction [010]. A current blocking layer consisting of the p type InP layer 6 and the n type InP layer 7 is buried in a groove 10 having a pair of (010) planes, by which the active layer 3 is divided into two in its center, and resonance faces 11 respectively consists of a (010) plane. As a result of such a constitution, a semiconductor laser, which oscillates in a single longitudinal mode, can be obtained. |
| 公开日期 | 1985-10-08 |
| 申请日期 | 1984-03-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86941]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA DENKI SANGYO KK |
| 推荐引用方式 GB/T 7714 | HIRAYAMA NORIYUKI,OOSHIMA MASAAKI,TAKENAKA NAOKI,et al. Semiconductor laser. JP1985198886A. 1985-10-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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