Semiconductor integrated light modulating element
文献类型：专利
| 作者 | AKIBA SHIGEYUKI; SUZUKI MASATOSHI; TANAKA HIDEAKI; KUSHIRO YUKITOSHI |
| 发表日期 | 1988-08-01 |
| 专利号 | JP1988186210A |
| 著作权人 | KOKUSAI DENSHIN DENWA CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor integrated light modulating element |
| 英文摘要 | PURPOSE:To prevent widening of the spectral width of modulated light by constituting a modulation waveguide with such a semiconductor layer with which the energy difference between the photon energy of the oscillated light of a laser part and the forbidden band width of the modulation waveguide attains 30-40meV. CONSTITUTION:The distributed feedback laser which oscillates a laser by injecting electric current to a light emitting layer 3 and a modulating element which modulates the output intensity of the distributed feedback laser by the electric field impressed to the modulation waveguide 8 are integrated on the same semiconductor substrate The difference between the photon energy of the oscillated light of the distributed feedback laser and the forbidden band width of the modulation waveguide 8 is >=30meV and <=40meV. The widening of the spectral width of the modulated light is thereby decreased. |
| 公开日期 | 1988-08-01 |
| 申请日期 | 1987-01-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86943]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KOKUSAI DENSHIN DENWA CO LTD |
| 推荐引用方式 GB/T 7714 | AKIBA SHIGEYUKI,SUZUKI MASATOSHI,TANAKA HIDEAKI,et al. Semiconductor integrated light modulating element. JP1988186210A. 1988-08-01. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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