Manufacture of semiconductor laser
文献类型：专利
| 作者 | KURIHARA HARUKI; WATANABE FUMIYA |
| 发表日期 | 1984-12-27 |
| 专利号 | JP1984232481A |
| 著作权人 | TOSHIBA KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To enable a construction like the quantum well construction by growing crystal to form a plain surface filling grooves by LPE(liquid phase epitaxy) method and by growing the remaining layers including an active layer using a method such as MBE(molecular beam epitaxial growth) which is excellent in the control of film thickness. CONSTITUTION:On an N-GAAsd substrate 1 which has a stripe-like groove 9, an N-AlxGa1-xAs clad layer 2 is grown and formed by LPE method. In this case, the thickness of the layer 2 except on the goove 9 is approx. 0.2mum and the surface of the layer 2 is plain even above the groove 9. Then, using this as a substrate, an N-AlxGa1-xAs clad layer 2 of approx. 0.1mum thick which is also a buffer layer, an N-AlyGa1-yAs active layer 3 of approx. 0.1mum thick, a P-Alz Ga1-z As clad layer 4 of approx. 2mum thick and, at last, an N-GaAs ohmic layer 5 of 0.5mum thick are sequentially grown and laminated by MBE method. Next, a P-channel 6 by selective diffusion of Zn is formed and electrodes 7, 8 are attached. |
| 公开日期 | 1984-12-27 |
| 申请日期 | 1983-06-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86945]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOSHIBA KK |
| 推荐引用方式 GB/T 7714 | KURIHARA HARUKI,WATANABE FUMIYA. Manufacture of semiconductor laser. JP1984232481A. 1984-12-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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