Manufacture of semiconductor laser
文献类型：专利
| 作者 | SUZUKI TOORU |
| 发表日期 | 1985-11-07 |
| 专利号 | JP1985223185A |
| 著作权人 | NIPPON DENKI KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To produce a highly reliable buried type laser with low oscillating threshold value subject to excellent reproducibility and yield by a method wherein mesa structures are formed on a wafer with double hetero junction by means of vapor etching process while a part or overall part of etched groove is filled with a semiconductor compound newly vapor-grown. CONSTITUTION:An N type Al0.3Ga0.7As 44, an undope GaAs 45, a P type Al0.3 Ga0.7As 46, a P type GaAs 47 are epitaxially grown on a GaAs crystal (surface 100) 41 to form a double hetero type wafer. Later an SiO2 or Si3M4 42 is filmed over hetero wafer by sputtering process or CVD process and then SiO2 excluding stripe type SiO2 is removed. Next when mesa approx.=10 with excellent sides and mirror surface subject to minimum crystal defect are provided by means of supplying AsH3 for preventing GaAs from decomposing and gas hydrochloride for etching to maintain high temperature, a buried layer 43 is to be formed. Then Au/Zn is evaporated into a stripe coated with SiO2 for annealing process to peel SiO2 for forming P type electrode. |
| 公开日期 | 1985-11-07 |
| 申请日期 | 1984-04-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86961]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON DENKI KK |
| 推荐引用方式 GB/T 7714 | SUZUKI TOORU. Manufacture of semiconductor laser. JP1985223185A. 1985-11-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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