Semiconductor laser device
文献类型：专利
| 作者 | HIRONAKA MISAO |
| 发表日期 | 1989-06-26 |
| 专利号 | JP1989161793A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To obtain a product requiring a little operating current, of a little astigmatic difference, having a high thickness controllability on a lower clad layers, and capable of improving the yield although the product relates to pulsation laser of a high noise characteristic, by forming recessions adjacent to a groove to narrow an electric current at the position of the inner portion of the resonator of an electric current blocking layer. CONSTITUTION:An internally built-in type semiconductor laser device comprises a first conductive type semiconductor substrate 1, a second conductive type electric current blocking layer 2 having a striped-looking groove 3a reaching said semiconductor substrate 1 at shallowest to narrow an electric current formed on said semiconductor substrate 1, a first conductive type lower clad layer 4 the lowest portion of which electrically comes into contact with the semiconductor substrate 1 through said striped- looking groove 3a formed on said electric current blocking layer 2, all active layer 5 formed on said lower clad layer 4, a second conductive type upper clad layer 6 formed on said active layer 5, and a second conductive type cap layer 7 formed on said upper clad layer 8. A resession 10 is formed at the position of the inner portion of the resonator 9b of the electric current blocking layer 2, which is adjacent to the striped-looking groove 3a to narrow an electric current. |
| 公开日期 | 1989-06-26 |
| 申请日期 | 1987-12-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86963]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | HIRONAKA MISAO. Semiconductor laser device. JP1989161793A. 1989-06-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。