Semiconductor light emitting device and method of manufacturing the same
文献类型：专利
| 作者 | WANG, SHIH YUAN; CHEN, YONG; CORZINE, SCOTT W.; KERN, R. SCOTT; COMAN, CARRIE CARTER; KRAMES, MICHAEL R.; KISH, FREDERICK A. JR.; KANEKO, YAWARA |
| 发表日期 | 2006-09-20 |
| 专利号 | EP0951076B1 |
| 著作权人 | LUMILEDS LIGHTING U.S., LLC |
| 国家 | 欧洲专利局 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor light emitting device and method of manufacturing the same |
| 英文摘要 | A buried reflector (50) in an epitaxial lateral growth layer (71) forms a part of a light emitting device and allows for the fabrication of a semiconductor material (71) that is substantially low in dislocation density. The laterally grown material (71) is low in dislocation defect density where it is grown over the buried reflector (50) making it suitable for high quality optical light emitting devices, and the embedded reflector (50) eliminates the need for developing an additional reflector. |
| 公开日期 | 2006-09-20 |
| 申请日期 | 1998-11-10 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86964]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | LUMILEDS LIGHTING U.S., LLC |
| 推荐引用方式 GB/T 7714 | WANG, SHIH YUAN,CHEN, YONG,CORZINE, SCOTT W.,et al. Semiconductor light emitting device and method of manufacturing the same. EP0951076B1. 2006-09-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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