中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Semiconductor device

文献类型:专利

作者FURUMIYA SATOSHI; MORIMOTO MASAHIRO
发表日期1986-05-16
专利号JP1986097890A
著作权人FUJITSU LTD
国家日本
文献子类发明申请
其他题名Semiconductor device
英文摘要PURPOSE:To contrive to improve the reliability by preventing the deterioration in element characteristics by a method wherein an electrode is formed by a coat of Ti layer on a semiconductor contact layer, next a coat or more of Pt layer and Ti layer in this order, and successive coats of Pt layer and Au layer thereon. CONSTITUTION:As the p-electrode, using electron beam deposition, the contact layer 6 is coated first with a Ti layer 7 and next with Ti-layers/Pt-layers by five-time repetition in this order, resulting in the formation of an intermediate multilayer structure 11; finally, it is coated with a Pt-layer 8, which is then coated with an Au layer 9 by a normal electrolytic plating. Thereafter, heat treatment is carried out to take ohmic contact between the contact layer 6 and the Ti layer 7. Next, after adhesion of an Au-Ge-Ni layer 10 as the n- electrode, ohmic contact is taken by forming an alloy layer on heat treatment. Then, the resonator is formed by cleavage in the direction parallel with the drawing.
公开日期1986-05-16
申请日期1984-10-18
状态失效
源URL[http://ir.opt.ac.cn/handle/181661/86967]  
专题半导体激光器专利数据库
作者单位FUJITSU LTD
推荐引用方式
GB/T 7714
FURUMIYA SATOSHI,MORIMOTO MASAHIRO. Semiconductor device. JP1986097890A. 1986-05-16.

入库方式: OAI收割

来源:西安光学精密机械研究所

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