Semiconductor device
文献类型：专利
| 作者 | FURUMIYA SATOSHI; MORIMOTO MASAHIRO |
| 发表日期 | 1986-05-16 |
| 专利号 | JP1986097890A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor device |
| 英文摘要 | PURPOSE:To contrive to improve the reliability by preventing the deterioration in element characteristics by a method wherein an electrode is formed by a coat of Ti layer on a semiconductor contact layer, next a coat or more of Pt layer and Ti layer in this order, and successive coats of Pt layer and Au layer thereon. CONSTITUTION:As the p-electrode, using electron beam deposition, the contact layer 6 is coated first with a Ti layer 7 and next with Ti-layers/Pt-layers by five-time repetition in this order, resulting in the formation of an intermediate multilayer structure 11; finally, it is coated with a Pt-layer 8, which is then coated with an Au layer 9 by a normal electrolytic plating. Thereafter, heat treatment is carried out to take ohmic contact between the contact layer 6 and the Ti layer 7. Next, after adhesion of an Au-Ge-Ni layer 10 as the n- electrode, ohmic contact is taken by forming an alloy layer on heat treatment. Then, the resonator is formed by cleavage in the direction parallel with the drawing. |
| 公开日期 | 1986-05-16 |
| 申请日期 | 1984-10-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86967]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | FURUMIYA SATOSHI,MORIMOTO MASAHIRO. Semiconductor device. JP1986097890A. 1986-05-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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