Manufacturing apparatus and manufacturing method for quantum dot material
文献类型：专利
| 作者 | PENG, CHANGSI |
| 发表日期 | 2014-06-11 |
| 专利号 | EP2741315A1 |
| 著作权人 | SOOCHOW UNIVERSITY |
| 国家 | 欧洲专利局 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacturing apparatus and manufacturing method for quantum dot material |
| 英文摘要 | A manufacturing apparatus and a manufacturing method for a quantum dot material. The manufacturing apparatus (10) adds an optical device (120) capable of generating an interference pattern in an existing epitaxial apparatus (110), so that a substrate (200) applies an interference pattern on an epitaxial layer while performing epitaxial growth. By means of the interference pattern, a regularly distributed temperature field is formed on the epitaxial layer, so that on the epitaxial layer, an atom aggregation phenomenon is formed at dot positions with higher temperature, but no atoms are aggregated on areas having relatively lower temperature. Therefore, according to the temperature distribution on the surface of the epitaxial layer, positions where quantum dots generate can be controlled manually without introducing defects, thereby achieving a defect-free and long-range ordered quantum dot manufacturing. |
| 公开日期 | 2014-06-11 |
| 申请日期 | 2012-07-02 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86975]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SOOCHOW UNIVERSITY |
| 推荐引用方式 GB/T 7714 | PENG, CHANGSI. Manufacturing apparatus and manufacturing method for quantum dot material. EP2741315A1. 2014-06-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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