Semiconductor laser device
文献类型：专利
| 作者 | YANO MORICHIKA; HAYAKAWA TOSHIRO; SUYAMA NAOHIRO; TAKAHASHI KOUSEI |
| 发表日期 | 1986-06-04 |
| 专利号 | JP1986116896A |
| 著作权人 | SHARP CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser device which has stable oscillating wavelength, good reproducibility and high yield by monolithically forming the laser with an external mirror, and forming a layer which has the maximum refractive index near the active layer with respect to the growing direction on one resonator surface. CONSTITUTION:A P type GaAlAs clad layer 2, a P type GaAlAs active layer 3, an N type GaAlAs clad layer 4, and an N type GaAs cap layer 5 are continuously grown by a molecular beam epitaxial method on a P type GaAs substrate Then, the portion A of the lateral length La of the laminate is coated by a mask, only the portion B of the lateral length Lgi adjacent to the portion A is normally etched to remove the supper layers 2-5 while intruding slightly to the substrate Then, when a GaAlAs layer 6 is buried in the portion B while allowing the mask to remain on the portion A, a laser light emitted from the portion A is reflected on the surface C of the end of the portion B so that the refractive index becomes maximum in the portion opposed to the layer 3, and again returned to the portion A. |
| 公开日期 | 1986-06-04 |
| 申请日期 | 1984-11-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86976]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP CORP |
| 推荐引用方式 GB/T 7714 | YANO MORICHIKA,HAYAKAWA TOSHIRO,SUYAMA NAOHIRO,et al. Semiconductor laser device. JP1986116896A. 1986-06-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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