Semiconductor laser
文献类型：专利
| 作者 | OSHIMA MASAAKI; HIRAYAMA NORIYUKI |
| 发表日期 | 1988-07-07 |
| 专利号 | JP1988164386A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To oscillate fine spotty laser beams by introducing beams in the direction horizontal to a substrate into the substrate, forming a reflective surface at 45 deg. while diaphragming beams by a lens shaped to the substrate. CONSTITUTION:An N-InP clad layer 2, an N-InGaAsP active layer 3, a P-InP clad layer 4 and a P-InGaAsP layer 5 are grown onto an N-InP substrate 1 in succession. An ohmic electrode 6 is evaporated and patterned, and these layers are worked at an angle of 45 deg. until they reach to at least the N-InP clad layer through etching. The N-InP substrate 1 is polished, and a resist is mounted circularly. When the substrate is heated, the resist takes a shape that the central section of the resist is thickened and a peripheral section is thinned through thermal deformation. When such a wafer is reactive ion-etched using CCl4 gas, an InP lens 9 can be formed by the retreat effect of the resist. In the laser, the two InP lenses and the active layer are operated as an optical resonator while fine spotty laser beams are acquired by a lens effect though beams elliptically spread in conventional lasers. |
| 公开日期 | 1988-07-07 |
| 申请日期 | 1986-12-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86984]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | OSHIMA MASAAKI,HIRAYAMA NORIYUKI. Semiconductor laser. JP1988164386A. 1988-07-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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