Method for manufacturing semiconductor optical device
文献类型：专利
| 作者 | KAWASAKI, KAZUSHIGE; KITANO, TOSHIAKI; OKA, TAKAFUMI |
| 发表日期 | 2010-07-06 |
| 专利号 | US7751456 |
| 著作权人 | MITSUBISHI ELECTRIC CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method for manufacturing semiconductor optical device |
| 英文摘要 | A method for manufacturing an laser diode includes: providing a wafer having thereon a semiconductor structure; depositing an SiO2 film; forming channels and a waveguide ridge between the channels in the wafer; forming an SiO2 film over the wafer; forming a resist pattern covering the SiO2 film in the channels such that the top surfaces of the resist pattern are lower than the top surface of the deposited SiO2 film on the top of the waveguide ridge, the resist pattern exposing the SiO2 film on the top of the waveguide ridge; removing the SiO2 film and the deposited SiO2 film by wet etching, using the resist pattern as a mask, to expose a p-GaN layer in the waveguide ridge; and forming an electrode layer on the top surface of the p-GaN layer. |
| 公开日期 | 2010-07-06 |
| 申请日期 | 2007-10-31 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86986]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORPORATION |
| 推荐引用方式 GB/T 7714 | KAWASAKI, KAZUSHIGE,KITANO, TOSHIAKI,OKA, TAKAFUMI. Method for manufacturing semiconductor optical device. US7751456. 2010-07-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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