A semiconductor laser device
文献类型：专利
| 作者 | KANEIWA, SHINJI 101 KYOBATE MANSION; TAKIGUCHI, HARUHISA; YOSHIDA, TOSHIHIKO; MATSUI, SADAYOSHI |
| 发表日期 | 1986-08-27 |
| 专利号 | EP0192451A2 |
| 著作权人 | SHARP KABUSHIKI KAISHA |
| 国家 | 欧洲专利局 |
| 文献子类 | 发明申请 |
| 其他题名 | A semiconductor laser device |
| 英文摘要 | A semiconductor laser device comprises a GaAlAs first cladding layer (2), a Ga1-xAlxAs (0≦×≦0.4) active layer (3) for laser oscillation, an In1-yGayP1-zAsz (z=2.04y-04, and (0≦z≦1)optical guiding layer (4) with a diffraction grating (44) thereon, a GaAlAs buffer layer (9) disposed between said active layer (3) and said optical guiding layer (4), and a GaAlAs second cladding layer (5), the width of the forbidden band of said buffer layer (9) being greater than that of said active layer (3) and smaller than that of said optical guiding layer (4). |
| 公开日期 | 1986-08-27 |
| 申请日期 | 1986-02-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86993]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | KANEIWA, SHINJI 101 KYOBATE MANSION,TAKIGUCHI, HARUHISA,YOSHIDA, TOSHIHIKO,et al. A semiconductor laser device. EP0192451A2. 1986-08-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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