Semiconductor light emitting element
文献类型：专利
| 作者 | IMANAKA KOUICHI; KAMIJIYOU TAKESHI |
| 发表日期 | 1985-04-10 |
| 专利号 | JP1985062180A |
| 著作权人 | OKI DENKI KOGYO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting element |
| 英文摘要 | PURPOSE:To produce the title element with excellent light emitting efficiency eliminating any current leakage channel by a method wherein, in a buried type semiconductor light emitting device with buried layers at both sides of a double hetero structure, the buried layers are composed of a lower layer comprising mixed crystal of InP or GaInAsP and an upper semi-insulating AlxGa1-xAs layer formed by organic metallic vapor growing process. CONSTITUTION:An N type InP layer 7 as a lower clad layer is coated with an active layer 8 whereon an N type upper clad layer 9 is deposited to form a double hetero structured light emitting element. Next both sides of the layer 9 including a part of the layer 7 are removed from the surface leaving the central part as a stripe. Later, the removed parts at both sides are buried in buried layers 10 to be current strangulating layers. At this time, the layers 10 are composed of a laminated body of a lower layer comprising non-doped InP or GaAsP coming into contact with the substrate 7 and an upper layer comprising semi- insulating AlxGa1-xAs. Through these procedures, the energy gap of the layers 10 may be augmented to restrict the current flowing therein. |
| 公开日期 | 1985-04-10 |
| 申请日期 | 1983-09-16 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86996]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OKI DENKI KOGYO KK |
| 推荐引用方式 GB/T 7714 | IMANAKA KOUICHI,KAMIJIYOU TAKESHI. Semiconductor light emitting element. JP1985062180A. 1985-04-10. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。