Semiconductor laser
文献类型：专利
| 作者 | KISHINO, KATSUMI; NOMURA, ICHIRO; ASATSUMA, TSUNENORI; NAKAMURA, HITOSHI |
| 发表日期 | 2007-09-20 |
| 专利号 | US20070217459A1 |
| 著作权人 | SONY CORPORATION |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | A semiconductor laser having an n-cladding layer, an optical guide layer, an active layer, an optical guide layer, and a p-cladding layer above an InP substrate, in which the active layer has a layer constituted with Be-containing group II-VI compound semiconductor mixed crystals, and at least one of layers of the n-cladding layer, the optical guide layer, and the p-cladding layer has a layer constituted with elements identical with those of the Be-containing group II-VI compound semiconductor mixed crystals of the active layer, and the layer is constituted with a superlattice structure comprising, as a well layer, mixed crystals of a Be compositions with the fluctuation of the composition being within ±30% compared with the Be composition of the group II-VI compound semiconductor mixed crystals of the active layer, whereby the device characteristics of the semiconductor laser comprising the Be-containing group II-VI compound semiconductor matched with the InP substrate. |
| 公开日期 | 2007-09-20 |
| 申请日期 | 2007-03-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86998]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SONY CORPORATION |
| 推荐引用方式 GB/T 7714 | KISHINO, KATSUMI,NOMURA, ICHIRO,ASATSUMA, TSUNENORI,et al. Semiconductor laser. US20070217459A1. 2007-09-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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