Semiconductor laser
文献类型：专利
| 作者 | NIDOU MASAAKI |
| 发表日期 | 1992-08-21 |
| 专利号 | JP1992234184A |
| 著作权人 | 日本電気株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser high in high temperature operation characteristics and high speed. modulation characteristics by a method wherein an InzGa1-zAsuP1-u layer smaller than an InP substrate in lattice constant and larger than a quantum well layer in band gap is made to serve as a barrier layer of a multi-quantum well. CONSTITUTION:An N electrode 1, an N-type InP substrate 2, an N-type InP clad layer 3, an In0.56Ga0.44As0.644P0.356 barrier layer 4 of 10nm or so in thickness, and an In0.53Ga0.47As quantum well layer 5 of 7nm or so in thickness are alternately laminated to constitute a multi-quantum well active layer. A semiconductor laser is composed of the multi-quantum active layer concerned, a P-type InP clad layer 6, a P-type In0.53Ga0.47As cap layer 7, and a P electrode 8. Therefore, in the barrier layer 4, the energy level of a light hole band end is higher than that of a heavy hole band end due to tensile strain, and a light hole band end overlaps a heavy hole band end in the other layers. |
| 公开日期 | 1992-08-21 |
| 申请日期 | 1990-12-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87001]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 日本電気株式会社 |
| 推荐引用方式 GB/T 7714 | NIDOU MASAAKI. Semiconductor laser. JP1992234184A. 1992-08-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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