中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Semiconductor light amplifying element

文献类型:专利

作者KIYOKU KATSUAKI; NOGUCHI ETSUO; YASAKA HIROSHI; KONDO SUSUMU; MIKAMI OSAMU; WAKATSUKI ATSUSHI
发表日期1992-01-21
专利号JP1992016931A
著作权人NIPPON TELEGR & TELEPH CORP
国家日本
文献子类发明申请
其他题名Semiconductor light amplifying element
英文摘要PURPOSE:To increase coupling efficiency with an optical fiber by setting the height of a window area part higher by about 5mum than the upper part of an activation area. CONSTITUTION:Third and fourth semiconductor laminated bodies functioning as a window structure area against waveguide structure, and first and second reflection prevention film 11, 12 arranged at the end faces of the third and fourth semiconductor laminated bodies at sides opposite to that of first and second semiconductor laminate bodies out of the third and fourth semiconductor laminate bodies are provided. In such a case, respective area length of the third and fourth semiconductor laminated bodies is set at >=20mum, and also, the thickness of the laminated body is set higher by >=5mum compared with the position of an upper boundary between an activation layer and a clad layer. In such a manner, it is possible to improve the coupling efficiency with the optical fiber by 2.5dB/end face, and to acquire the improvement of 5dB in a gain between fibers.
公开日期1992-01-21
申请日期1990-05-11
状态失效
源URL[http://ir.opt.ac.cn/handle/181661/87003]  
专题半导体激光器专利数据库
作者单位NIPPON TELEGR & TELEPH CORP
推荐引用方式
GB/T 7714
KIYOKU KATSUAKI,NOGUCHI ETSUO,YASAKA HIROSHI,et al. Semiconductor light amplifying element. JP1992016931A. 1992-01-21.

入库方式: OAI收割

来源:西安光学精密机械研究所

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