Semiconductor laser device
文献类型：专利
| 作者 | TAKADO, SHINYA; KASHIWAGI, JUNICHI |
| 发表日期 | 2016-09-13 |
| 专利号 | US9444225 |
| 著作权人 | ROHM CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | A semiconductor laser device generates blue-violet light with an emission wavelength of 400 to 410 nm. The device includes an n-type group III nitride semiconductor layer, an active layer laminated on the n-type semiconductor layer and having an InGaN quantum well layer, a p-type group III nitride semiconductor layer laminated on the active layer, and a transparent electrode contacting the p-type semiconductor layer and serving as a clad. The n-type semiconductor layer includes an n-type clad layer and an n-type guide layer disposed between the clad layer and the active layer. The guide layer includes a superlattice layer in which an InGaN layer and an AlxGa1-xN layer (0≦X<1) are laminated periodically, the superlattice layer contacting the active layer and having an average refractive index of 2.6 or lower. The In composition of the InGaN layer is lower than that of the InGaN quantum well layer. |
| 公开日期 | 2016-09-13 |
| 申请日期 | 2014-10-20 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87005]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ROHM CO., LTD. |
| 推荐引用方式 GB/T 7714 | TAKADO, SHINYA,KASHIWAGI, JUNICHI. Semiconductor laser device. US9444225. 2016-09-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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