Manufacture of optical semiconductor device
文献类型：专利
| 作者 | TAKANO SHINJI |
| 发表日期 | 1989-10-04 |
| 专利号 | JP1989248586A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of optical semiconductor device |
| 英文摘要 | PURPOSE:To facilitate formation of a three-dimensional quantum well structure easily and with the good reproducibility by a method wherein a thin film which contains fine defects is formed on a substrate, etch-pits are formed in the thin film, etching is performed with the thin film as a mask to form fine holes in the substrate under the etch-pit and fine active regions are formed in the holes. CONSTITUTION:A p-type InP cladding layer 20 and an n-type blocking layer 25 are built up on an n-type InP substrate 10 and then an InGaAsP layer 30 which contains many crystal defects whose composition is a little different from the composition of the semiconductor is built up to form a laminated structure. By etching the semiconductor, very fine etch-pits 35 are formed in the semiconductor surface. After that, etching is performed with the semiconductor layer 30 as a mask to form fine holes 45 in the lower semiconductor. If the InGaAsP layer 30 only is removed after that, fine cubic holes can be formed in the surface of the semiconductor easily and with the good reproducibility. Further, an InGaAs quantum well active layer 55 is built up on the surface of the laminated structure and etched in a short time to remove the InGaAsP layer on the flat part only and form the active regions in the holes only. |
| 公开日期 | 1989-10-04 |
| 申请日期 | 1988-03-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87007]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | TAKANO SHINJI. Manufacture of optical semiconductor device. JP1989248586A. 1989-10-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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