Semiconductor laser and method for manufacturing the same
文献类型：专利
| 作者 | SASAHATA, YOSHIFUMI; MATSUMOTO, KEISUKE; AOYAGI, TOSHITAKA; KONDOW, MASAHIKO; MORIFUJI, MASATO; MOMOSE, HIDEKI |
| 发表日期 | 2009-09-10 |
| 专利号 | US20090225804A1 |
| 著作权人 | MITSUBISHI ELECTRIC CORPORATION |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser and method for manufacturing the same |
| 英文摘要 | A semiconductor laser comprises an active section for generating light, and a peripheral section as resonator for producing laser light from the generated light, and includes an InP substrate. The active section has a lower cladding layer formed of AlInAs or AlGaInAs, a core layer including an active layer formed of AlGaInAs or InGaAsP, and an upper cladding layer formed of AlInAs or AlGaInAs. The peripheral section has a first cladding layer formed by oxidizing AlInAs or AlGaInAs, a core layer, and a second clad layer formed by oxidizing AlInAs or AlGaInAs, and a two-dimensional photonic crystal defined by an array of regularly spaced apart holes the peripheral section. |
| 公开日期 | 2009-09-10 |
| 申请日期 | 2009-02-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87010]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORPORATION |
| 推荐引用方式 GB/T 7714 | SASAHATA, YOSHIFUMI,MATSUMOTO, KEISUKE,AOYAGI, TOSHITAKA,et al. Semiconductor laser and method for manufacturing the same. US20090225804A1. 2009-09-10. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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