Manufacture of semiconductor laser
文献类型：专利
| 作者 | FUJIMOTO AKIRA |
| 发表日期 | 1988-08-11 |
| 专利号 | JP1988194382A |
| 著作权人 | OMRON TATEISI ELECTRONICS CO |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To realize a semiconductor laser having a narrow internal stripe by forming a current blocking layer onto a ridge protruding on a substrate, holding a wafer at a high temperature and shaping the internal stripe to the current blocking layer on the ridge. CONSTITUTION:A ridge 9 is formed onto a P-type GaAs substrate 1 by using photolithography and etching. An N-type GaAs current blocking layer 2, a P-type clad layer 3, a GaAs active layer 4, an N-type clad layer 5 and an N-type GaAs ohmic layer 6 are each grown on the ridge 9 through LPE growth. The substrate 1 and all the growth layers 2-6 are held for two hr. at a temperature to 790 deg.C in a growth device after said growth process. Consequently, Zn in the substrate 1 doped in high concentration is diffused to the current blocking layer 2, and one part of the lower side of the N-type GaAs layer 2 is inverted into a P-type and an inversion layer 10 is shaped. Since the current blocking layer 2 on the ridge 9 is thinned as approximately 0.2mum at that time, all the layer 2 are inverted into P-type GaAs, and the path 12 of currents is formed. |
| 公开日期 | 1988-08-11 |
| 申请日期 | 1987-02-09 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87031]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OMRON TATEISI ELECTRONICS CO |
| 推荐引用方式 GB/T 7714 | FUJIMOTO AKIRA. Manufacture of semiconductor laser. JP1988194382A. 1988-08-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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