Semiconductor laser element
文献类型：专利
| 作者 | KURIHARA HARUKI; TANAKA HIROKAZU |
| 发表日期 | 1991-02-26 |
| 专利号 | JP1991044991A |
| 著作权人 | TOSHIBA CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | PURPOSE:To obtain a self-pulse modulating semiconductor laser element which is capable of carrying out high output performance and easily manufacturable by installing a reaction waveguide passage which is made of a specified compound semiconductor and thick as specified, to an inter layer between an active layer and a first clad layer. CONSTITUTION:In terms of a semiconductor laser element in internal stripe structure, between its active layer 10 and a first clad layer 11 is installed a counter waveguide passage layer 15 which comprises a compound semiconductor crystal whose refraction index is smaller than the layer 1 Moreover, the thickness of the reaction waveguide passage layer 15 in a cross section where it crosses directly with the optical axis of a resonator is designed to be relatively thicker in the central part of a loss type optical waveguide compared with the thickness at the both ends. Under this structure, a spot width extends beyond the internal strip width by inserting the reaction waveguide layer 15 so that a saturation absorbable body may be formed on a section where the spot width exceeds the internal strip width. It is, therefore possible to improve higher output performance. |
| 公开日期 | 1991-02-26 |
| 申请日期 | 1989-07-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87033]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOSHIBA CORP |
| 推荐引用方式 GB/T 7714 | KURIHARA HARUKI,TANAKA HIROKAZU. Semiconductor laser element. JP1991044991A. 1991-02-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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