Semiconductor laser element
文献类型：专利
| 作者 | YAMASHITA SHIGEO; KAJIMURA TAKASHI |
| 发表日期 | 1990-03-19 |
| 专利号 | JP1990078291A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | PURPOSE:To enable a semiconductor laser element to stably oscillate laser rays in a lateral basic mode at a low to a high optical output power by a method wherein an optical waveguide ridge is provided, and the end sections and the center section of the ridge are made thin and the rest part is made wide so as to widen the spectral distribution of gain. CONSTITUTION:The following are successively formed in lamination on an n-type substrate 1: an n-type clad layer 2; an active layer 3; a p type clad layer 4; an n-type current constricting layer 11; a p-type buried layer 12; and a p-type cap layer 13. Next, SiO2 films, a p-type interface layer 5 and the p-type clad layer 4, formed on the surface are etched to provide an optical waveguide ridge 6. The width of the ridge 6 is made thin at end faces 8 and a center 9 of a semiconductor 7 and large at the rest part. Furthermore, the constricting layer 11 is selectively provided to the outside of the ridge 6. Then, if the width of an optical waveguide stripe is varied in an axial direction, an excitation level changes. By this setup, a spectral distribution of gain is widened, so that the ridge 6 can be made to oscillate stably in a lateral basic mode at a low to a high output power. |
| 公开日期 | 1990-03-19 |
| 申请日期 | 1988-09-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87038]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | YAMASHITA SHIGEO,KAJIMURA TAKASHI. Semiconductor laser element. JP1990078291A. 1990-03-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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