中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Frequency variable semiconductor laser

文献类型:专利

作者FUJITA TOSHIHIRO; SERIZAWA HIROMOTO
发表日期1984-04-14
专利号JP1984066183A
著作权人MATSUSHITA DENKI SANGYO KK
国家日本
文献子类发明申请
其他题名Frequency variable semiconductor laser
英文摘要PURPOSE:To obtain stable wavelength variable effect by disposing a member having piezoelectric effect parallel to the surface formed with a diffraction grating of a semiconductor laser having a periodic structure of the grating in a resonator to enable to apply an AC voltage. CONSTITUTION:A diffraction grating 2 is formed on a substrate 1, and to avoid the influence of the substrate 1, a waveguide layer 3 is formed, an active layer 4, a buffer layer 5, a clad layer 6, and electrodes 7, 8 are formed. In order to vary the oscillating frequency, only one layer 10 having piezoelectric effect is newly added to the DFB laser operating by modulating a current source 9. The original osicllation vertical mode spectrum is formed to be sufficiently narrow in width of spectrum by using the stabilized current source as the current source 12 to the semiconductor laser, a signal source 11 for applying a voltage to the layer 10 of the piezoelectric material is used to vary the oscillating wavelength of the laser so that the period of the diffraction grating of the DFB laser may vary.
公开日期1984-04-14
申请日期1982-10-07
状态失效
源URL[http://ir.opt.ac.cn/handle/181661/87039]  
专题半导体激光器专利数据库
作者单位MATSUSHITA DENKI SANGYO KK
推荐引用方式
GB/T 7714
FUJITA TOSHIHIRO,SERIZAWA HIROMOTO. Frequency variable semiconductor laser. JP1984066183A. 1984-04-14.

入库方式: OAI收割

来源:西安光学精密机械研究所

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