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文献类型：专利
| 作者 | KAWADA HATSUMI; YAMAMOTO MOTOYUKI; NAGASAKA HIROKO |
| 发表日期 | 1993-10-19 |
| 专利号 | JP1993074957B2 |
| 著作权人 | TOKYO SHIBAURA ELECTRIC CO |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To ensure the yield of built-in waveguide effect by the difference in effective index, to implement a low threshold value and to oscillate a stable lateral mode at high output power, by providing a structure of two or more coating layers, and specifying the width of a stripe groove and the distance between waveguides. CONSTITUTION:On the (100) surface of an N-GaAs substrate 11, an N-GaAlAs clad layer 12, an undoped GaAlAs active layer 13, a P-GaAlAs clad layer 14 and an N-GaAs current blocking layer 15 are sequentially grown. Photoresist 21 is applied on the layer 15. A stripe shaped window is formed in the resist. Selective etching is performed to the intermediate part of the layer 14 through the layer 15, and a groove 22 is formed. A width W of the bottom surface and a distance (h) from the bottom surface to the active layer 13 are made to be 0.7<=W<=2.0mum and 0.5<=hmum. The resist layer 21 is removed. A P-GaAlAs coating layer 16, a P-GaAlAs coating layer 17 and a P-GaAs contact layer 18 having the different compositions are formed. Electrodes 19 and 20 are formed. Cleavage is performed and a laser element is obtained. |
| 公开日期 | 1993-10-19 |
| 申请日期 | 1985-03-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87045]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOKYO SHIBAURA ELECTRIC CO |
| 推荐引用方式 GB/T 7714 | KAWADA HATSUMI,YAMAMOTO MOTOYUKI,NAGASAKA HIROKO. -. JP1993074957B2. 1993-10-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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