Semiconductor laser that generates second harmonic light with attached nonlinear crystal
文献类型：专利
| 作者 | FOUQUET, JULIE E.; YAMADA, NORIHIDE |
| 发表日期 | 1995-05-24 |
| 专利号 | EP0654874A1 |
| 著作权人 | AGILENT TECHNOLOGIES, INC. |
| 国家 | 欧洲专利局 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser that generates second harmonic light with attached nonlinear crystal |
| 英文摘要 | A semiconductor laser with a nonlinear crystal (23, 47, 75, 111) that generates second harmonic light at a frequency which is twice the fundamental frequency of the laser. The laser is configured in a vertical-cavity, surface-emitting structure or an edge-emitting structure. A nonlinear crystal is attached to a semiconductor optical amplifier (15, 31, 67, 95) by fusing with wafer bonding techniques or by epitaxially growing the nonlinear crystal on the amplifier. The amplifier and the nonlinear crystal are located inside a laser cavity (27, 87) that is defined between a pair of reflectors (11, 25; 43, 49; 63, 81; 117, 119). One of the reflectors (25, 49, 81, 119) is located adjacent the nonlinear crystal and is highly reflective at the fundamental frequency but transmissive at twice the fundamental frequency. Light is generated at the fundamental frequency, doubled in frequency as it passes back and forth through the nonlinear crystal, and emitted through the reflector adjacent the nonlinear crystal. An optional region (49, 51, 91, 121) between the amplifier and the nonlinear crystal prevents reflections at the fundamental frequency or prevents light at twice the fundamental frequency from propagating from the nonlinear crystal into the amplifier. |
| 公开日期 | 1995-05-24 |
| 申请日期 | 1994-11-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87056]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | AGILENT TECHNOLOGIES, INC. |
| 推荐引用方式 GB/T 7714 | FOUQUET, JULIE E.,YAMADA, NORIHIDE. Semiconductor laser that generates second harmonic light with attached nonlinear crystal. EP0654874A1. 1995-05-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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