半導体レーザ装置およびその製造方法
文献类型：专利
| 作者 | 厚主 文弘; 猪口 和彦; 奥村 敏之; 滝口 治久 |
| 发表日期 | 2000-06-23 |
| 专利号 | JP3080643B2 |
| 著作权人 | シャープ株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レーザ装置およびその製造方法 |
| 英文摘要 | PURPOSE:To reduce a reactive current flowing in a current block layer, and prevent the contamination of an active layer, by forming a first clad layer on the bottom surface and the side surface of a stripe trench in a buried type semiconductor laser element, and isolating both ends of the active layer from both side surfaces of the stripe trench. CONSTITUTION:After a multilayer current blocking layer 102 is formed on a Zn-doped P-InP substrate having a (100) face, a stripe trench 112 is formed along the [011] direction by etching. Said trench 112 reaches the P-InP substrate 10 A first clad layer 103 of Zn-doped P-InP is grown on the (100) surface and the (III)B surface of the stripe trench. An active layer 104 of undoped GaInAsP is grown on the bottom surface of a stripe trench 115 of the first clad layer 103. A second clad layer 105 of Si-doped N-InP is grown on the bottom surface of the active layer 104 and on the side surface of the first clad layer 103. Thereby it can be prevented for the active layer to be contaminated by impurities, and the active layer width can be controlled with high precision. |
| 公开日期 | 2000-08-28 |
| 申请日期 | 1990-09-06 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87063]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | シャープ株式会社 |
| 推荐引用方式 GB/T 7714 | 厚主 文弘,猪口 和彦,奥村 敏之,等. 半導体レーザ装置およびその製造方法. JP3080643B2. 2000-06-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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