Manufacture of semiconductor laser
文献类型：专利
| 作者 | NIDOU MASAAKI |
| 发表日期 | 1988-02-09 |
| 专利号 | JP1988031191A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To prevent concentration of stress on laser oscillation region and acquire high reliability for a long period of time by selectively diffusing impurity of a conductivity type leaving a striped region and then removing a 5th semiconductor layer prior to a 2nd epitaxial growth process to grow a 6th semiconductor layer. CONSTITUTION:A P-type Al0.46Ga0.55As layer 2, Al0.15Ga0.85As active layer 3, N-type Al0.45Ga0.55As layer 4, super lattice layer 5 and GaAs layer 6 are sequentially formed by a 1st metal organic vapor phase eptaxy (MOVPE) process. Next, Zn is diffused up to the depth not penetrating through the layer 4 leaving the striped region of super lattice layer 5 to form an impurity-diffused layer 7. After removing the layer 6 by the gas phase etching using hydrogen chloride and arsine, N-type Al0.45Ga0.55As layer 8 and N-type GaAs layer 9 are formed by a 2nd MOVPE process. Finally, N-type electrode 10 and P-type electrode 11 are formed, completing a semiconductor laser. Thereby, extra stress is not applied on the active layer and a semiconductor laser having excellent reliability can be obtained. |
| 公开日期 | 1988-02-09 |
| 申请日期 | 1986-07-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87065]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | NIDOU MASAAKI. Manufacture of semiconductor laser. JP1988031191A. 1988-02-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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