Manufacture of semiconductor laser element
文献类型：专利
| 作者 | IMASHIYOU YOSHIHIRO |
| 发表日期 | 1989-12-08 |
| 专利号 | JP1989305586A |
| 著作权人 | FURUKAWA ELECTRIC CO LTD:THE |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser element |
| 英文摘要 | PURPOSE:To form an activated layer having a narrow width, by providing a groove of specified size on a clad layer laminated on a substrate, and forming an activated layer of a desired width selectively through the MOCVD method. CONSTITUTION:A dielectric film is laminated on an n-type InP substrate 1, and a stripelike groove corresponding to the width and depth of a desired activated layer 3 is cut in the dielectric film. Then, a groove whose width and depth are the same as or larger than those of the desired activated layer is cut in the upside of the substrate 1 under the stripelike groove. Next, an activated layer 3 and a p-type InP clad layer 4 are selectively formed through the MOCVD method in the groove, and an SiO2 dielectric film 9 is formed only on the clad layer 4 after the dielectric film has been removed. And, a current block layer is formed by selectively laminating a semi-dielectric semiconductor 10 of InP through the MOCVD method, and then the dielectric film 9 is removed. After that, a p-type InP clad layer 7 and an InCaAsP cap layer 8 are formed successively on the semiconductor 10 to finish the process. The use of the above- mentioned method enables a narrow, activated layer to grow without any complicated, unstable processes. |
| 公开日期 | 1989-12-08 |
| 申请日期 | 1988-06-03 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87069]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FURUKAWA ELECTRIC CO LTD:THE |
| 推荐引用方式 GB/T 7714 | IMASHIYOU YOSHIHIRO. Manufacture of semiconductor laser element. JP1989305586A. 1989-12-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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