光半導体装置
文献类型：专利
| 作者 | 早川 利郎; 須山 尚宏; 高橋 向星; 山本 三郎 |
| 发表日期 | 1994-08-31 |
| 专利号 | JP1994069109B2 |
| 著作权人 | シャ-プ株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 光半導体装置 |
| 英文摘要 | PURPOSE:To improve the reliability with high efficiency by removing a quantum effect suppressing action caused by the fluctuation of a remarkably potential in a multicomponent mixed crystal semiconductor. CONSTITUTION:When a superlattice multiple quantum well MQW laser is formed with a single molecule layer as a constituent unit, clad layer 22, 24 from (Al0.6 Ga0.4)0.5In0.5P, a well layer 31 forms (Al0.17Ga0.83)0.5In0.5P, and a barrier layer 32 form (Al0.4Ga0.5)0.5In0.5 in a mixed crystal. Since Al, Ga and In atoms are completely ordered and arranged, no scatter base on random order and the fluctuations of quantum well potential are eliminated, but an ideal well MQW is formed to obtain a semiconductor device having excellent reliability with high efficiency. |
| 公开日期 | 1994-08-31 |
| 申请日期 | 1984-12-07 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87071]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | シャ-プ株式会社 |
| 推荐引用方式 GB/T 7714 | 早川 利郎,須山 尚宏,高橋 向星,等. 光半導体装置. JP1994069109B2. 1994-08-31. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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