Production of inclined type quantum well structure
文献类型：专利
| 作者 | NISHI KENICHI |
| 发表日期 | 1989-06-05 |
| 专利号 | JP1989142710A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Production of inclined type quantum well structure |
| 英文摘要 | PURPOSE:To change a rectangular quantum well structure to an inclined quantum well structure in a heat treatment stage after growth by forming the rectangular quantum well structure at the time of growth of a semiconductor and controlling the doping of this time. CONSTITUTION:Si-added GaAs buffer and Si-added Al0.6Ga0.4As clad layer 10 are formed on an Si-added GaAs substrate by a molecular epitaxy method. Si-added Al0.6Ga0.4As 11 having about 20Angstrom thickness, Si-added GaAs 12 having about 20Angstrom thickness, non-added GaAs 13 having about 40Angstrom thickness and non- added Al0.6Ga0.4As 14 having about 80Angstrom are laminated thereon and are grown in multiple periods with 4 layers as one period. Be-added Al0.6Ga0.4As clad 15 and Be-added GaAs cap are then superposed thereon. The inclined type quantum well which is steep only at one boundary face, i.e., the AlxGa1-xAs (x changes form 0.6-0) layer 16 is obtd. by the inter-diffusion between the layers 11 and 12 if the surface is protected by the GaAs and the layers are treated for 60min at 650 deg.C. The need for the stage for changing the cell temp., etc., is not needed for the growth and the inclined type quantum well is obtd. with good reproducibility without fluctuations according to this constitution. |
| 公开日期 | 1989-06-05 |
| 申请日期 | 1987-11-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87074]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | NISHI KENICHI. Production of inclined type quantum well structure. JP1989142710A. 1989-06-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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