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文献类型：专利
| 作者 | SUZAKI SHINZO |
| 发表日期 | 1989-12-13 |
| 专利号 | JP1989058678B2 |
| 著作权人 | FUJIKURA DENSEN KK |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To inhibit oscillation by a Fabry-Perot mode approximately completely, and to conduct chipping by cleavage having excellnt workability by forming a bent section to one part of an external waveguide. CONSTITUTION:An InGaAsP active waveguide layer 2, an N-InP clad layer 3 and a P-InGaAsP cap layer 4 are shaped onto an N-InP substrate 1 in succession, a section corresponding to the active waveguide layer 2 is left, and other sections are etched up to the substrate A recessed groove 1a is formed at the end section of the exposed substrate 1, and an InGaAsP external waveguide layer 5 is shaped. An N-InP clad layer 6 is shaped, and thickness is controlled so that the surface is flattened approximately. A diffraction grating 7 is formed, and striped structure having an inverted mesa-shaped section is shaped. P-InP first buried layers 12 and N-InP second buried layers 13 are grown on both sides of striped structure in succession, an SiO2 or Si3N4 protective film 8 is shaped, and an Au/Zn electrode 9 and an Au/Sn electrode 10 are formed. Lastly, both end surfaces are cloven, thus completing chipping. |
| 公开日期 | 1989-12-13 |
| 申请日期 | 1985-05-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87075]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJIKURA DENSEN KK |
| 推荐引用方式 GB/T 7714 | SUZAKI SHINZO. -. JP1989058678B2. 1989-12-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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