Semiconductor laser
文献类型：专利
| 作者 | OE KUNISHIGE; YOSHIKUNI YUZO |
| 发表日期 | 1988-10-07 |
| 专利号 | JP1988241977A |
| 著作权人 | NIPPON TELEGR & TELEPH CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser stable against variations in a temperature and an optical output by forming an optical guide layer and a clad layer of both sides between which an active layer of a distributed feedback semiconductor laser is disposed of a semiconductor having a light absorption coefficient of the reciprocal of the length of a laser resonator. CONSTITUTION:An optical guide layer 4 and a clad layer 2 of both sides between which an active layer 3 of a distributed feedback semiconductor laser is disposed are formed of a semiconductor having an absorption coefficient of the reciprocal of the length of a resonator. Then, the value of the same degree as a spectral beam width obtained by heretofore integrating with a semiconductor optical guide is stably obtained even if a temperature and an optical output are varied. Accordingly, a spectral beam width is narrowed without raising a threshold value. Thus, a semiconductor laser stable against the variations in the temperature and the optical output can be obtained. |
| 公开日期 | 1988-10-07 |
| 申请日期 | 1987-03-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87076]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON TELEGR & TELEPH CORP |
| 推荐引用方式 GB/T 7714 | OE KUNISHIGE,YOSHIKUNI YUZO. Semiconductor laser. JP1988241977A. 1988-10-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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