Optical semiconductor element
文献类型：专利
| 作者 | SHIGENO KAZUO |
| 发表日期 | 1991-02-04 |
| 专利号 | JP1991025990A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Optical semiconductor element |
| 英文摘要 | PURPOSE:To suppress deterioration of conduction and to improve reliability by providing a buffer layer of an InGaAsP composition between a substrate and an active layer adjacent to the active layer of an optical semiconductor element having a hetero junction epitaxially grown on an InP substrate. CONSTITUTION:A structure of a semiconductor laser (LD) is a DC-PBH(double hetero plenary buried hetero) structure. A n-type InP buffer layer 9, an n-type InGaAsP buffer layer 8, an InGaAsP active layer 7, and a p-type InP clad layer 6 are flatly laminated on an n-type InP substrate 10. Two grooves are dug on the laminated layer structure to form a mesa stripe 30 to become an active region. Then, a p-type InP block layer 5, an n-type InP block layer 4, a p-type InP cap layer 3 and a p-type InGaAsP cap layer 2 are sequentially formed by second epitaxial growing, mesa stripe is buried and manufactured. |
| 公开日期 | 1991-02-04 |
| 申请日期 | 1989-06-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87093]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | SHIGENO KAZUO. Optical semiconductor element. JP1991025990A. 1991-02-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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