Semiconductor laser device
文献类型：专利
| 作者 | YAMAMOTO ATSUYA; SUGINO TAKASHI; YOSHIKAWA AKIO; NAKAMURA AKIRA; HIROSE MASANORI; KUME MASAHIRO |
| 发表日期 | 1989-04-20 |
| 专利号 | JP1989103892A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To enable a basic lateral oscillation of a laser device of this design at a low threshold value by a method wherein a stripe-like multilayer thin film composed of two negative conductivity type semiconductor layers which sandwich an active layer between them is provided, where a thin film section of the conductivity type opposite to that of the multilayer thin film is provided adjacently to at least one of the sides of the multilayer thin film. CONSTITUTION:Carriers are not only directly injected into an active layer 3 from a p-type region 8 but also through an n-type clad layer 2, so that an active region is small in series resistance and the oscillation is made to start with a low threshold current. A heat release is made to decrease in an optical output and light emitting efficiency hardly happens. Zn is made to diffuse in the p-type region 8 and a quantum well layer is made to turn into a mixed crystal structure due to the disorder of Zn, so that the active layer of a stripe W in width is made to be an optical waveguide and oscillated laser rays are trapped in the active layer. Furthmore, a paired electrodes 6 and 7 can be formed on the same plane owing to the p-type region 8, therefore the laser device of this design is made to be a planar structure and can be easily integrated together with other electronic circuit elements. |
| 公开日期 | 1989-04-20 |
| 申请日期 | 1987-10-16 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87096]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | YAMAMOTO ATSUYA,SUGINO TAKASHI,YOSHIKAWA AKIO,et al. Semiconductor laser device. JP1989103892A. 1989-04-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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