Crystal growth method for compound semiconductor
文献类型：专利
| 作者 | HATTORI AKIRA; SONODA TAKUJI |
| 发表日期 | 1990-10-12 |
| 专利号 | JP1990253685A |
| 著作权人 | 三菱電機株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Crystal growth method for compound semiconductor |
| 英文摘要 | PURPOSE:To clean a surface on which a window layer is to be built up efficiently and facilitate formation of the window layer having a low surface level by a method wherein, in addition to group V elements of which a compound semiconductor crystal is made, one or more elements among In, Sb, Si, Sn and Be are applied to the surface of a semiconductor laser on which the window layer is to be built up beforehand and then the window layer is built up. CONSTITUTION:In order to build up a thin film made of compound semiconductor on the end surface of the resonator of a semiconductor laser made of III-V compound semiconductor as a window layer by a molecular beam epitaxy method, the semiconductor laser on which the window layer is to be formed is heated to a high temperature in an extra-high vacuum molecular beam epitaxy apparatus before the window layer is built up. Then, in addition to group V elements of which a compound semiconductor crystal of which the semiconductor laser is composed is made, one or more elements among In, Sb, Si, Sn and Be are applied to the surface of the semiconductor laser on which the window layer is to be built up beforehand and then the window layer is built up. With this constitution, the growth surface is efficiently cleaned and the satisfactory window layer having a low surface level can be formed. |
| 公开日期 | 1990-10-12 |
| 申请日期 | 1989-03-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87097]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 三菱電機株式会社 |
| 推荐引用方式 GB/T 7714 | HATTORI AKIRA,SONODA TAKUJI. Crystal growth method for compound semiconductor. JP1990253685A. 1990-10-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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